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advanced power n and p-channel enhancemen t electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 50m fast switching characteristic i d 5a p-ch bv dss -30v r ds(on) 70m description i d -4a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage -30 v v gs gate-source voltage + 20 v i d @t a =25 continuous drain current 3 -4 a i d @t a =70 continuous drain current 3 -3.2 a i dm pulsed drain current 1 -20 a p d @t a =25 total power dissipation w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice AP4532GM 2 parameter thermal data rohs-compliant product 30 + 20 5 1 4 20 201201302 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 50 m v gs =4.5v, i d =4.2a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 8 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 10.2 - nc q gs gate-source charge v ds =10v - 1.2 - nc q gd gate-drain ("miller") charge v gs =10v - 3.4 - nc t d(on) turn-on delay time 2 v ds =10v - 6 - ns t r rise time i d =1a - 9 - ns t d(off) turn-off delay time r g =6 ,v gs =10v - 15 - ns t f fall time r d =10 - 5.5 - ns c iss input capacitance v gs =0v - 240 - pf c oss output capacitance v ds =25v - 145 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1.7 a v sd forward on voltage 2 t j =25 , i s =1.7a, v gs =0v - - 1.2 v AP4532GM 2
AP4532GM p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua -30 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.028 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 70 m v gs =-4.5v, i d =-3a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-4a - 5 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-4a - 18.3 - nc q gs gate-source charge v ds =-10v - 3.6 - nc q gd gate-drain ("miller") charge v gs =-10v - 1.5 - nc t d(on) turn-on delay time 2 v ds =-10v - 8 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =6 ,v gs =-10v - 21 - ns t f fall time r d =10 -10- ns c iss input capacitance v gs =0v - 760 - pf c oss output capacitance v ds =-25v - 345 - pf c rss reverse transfer capacitance f=1.0mhz - 90 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -1.7 a v sd forward on voltage 2 t j =25 , i s =-1.7a, v gs =0v - - -1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. apec does not assume any liability arising out of the application or use of any product or circuit described
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature AP4532GM 4 0 10 20 30 40 50 60 70 0123456789 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 8.0v 6.0v 4.0v v gs =3.0v 0 10 20 30 40 50 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 10v 8.0v 6.0v 4.0v v gs =3.0v 35 45 55 65 75 85 246810 v gs (v) r ds(on) (m ) i d =5a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v gs =10 v
AP4532GM n-channel fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 5 0 1 2 3 4 5 6 25 50 75 100 125 150 t a , ambient temperature ( o c) i d , drain current (a) 0 1 2 3 0 50 100 150 t a , ambient temperature ( o c) p d (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t a =25 o c sin g le pulse 1ms 10ms 100ms 1s 10s d c
n-channel fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature AP4532GM 6 10 100 1000 1 5 9 13 17 21 25 29 v ds (v) c (pf) f =1.0mhz ciss coss crss 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =10v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v)
AP4532GM n-channel fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 7 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.33x rated v ds to the oscilloscope - + 10v d g s v ds v gs r g r d 0.33 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 ma
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 8 AP4532GM 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs = -10v i d =-4.0a 0 5 10 15 20 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -8.0v -6.0v v gs =-4.0v 0 5 10 15 20 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -8.0v -6.0v v gs =-4.0v 30 40 50 60 70 80 90 246810 -v gs (v) r ds(on) (m ) i d =-4.0a t a =25
AP4532GM p-channel fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 9 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 1 2 3 4 5 25 50 75 100 125 150 t a , ambient temperature ( o c) -i d , drain current (a) 0 0.5 1 1.5 2 2.5 3 0 50 100 150 t a , ambient temperature ( o c) p d (w) 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c s in g le pluse 1ms 10ms 100ms 1s 10s d c
p-channel fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 10 AP4532GM 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd (v) -i s (a) t j =25 o c t j =150 o c 10 100 1000 10000 1 5 9 1317212529 -v ds (v) c (pf) f =1.0mhz ciss coss crss 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 t j ,junction temperature ( o c) -v gs(th) (v) 0 2 4 6 8 10 12 0 2 4 6 8 101214161820 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-4a v ds =-10v
AP4532GM p-channel fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 11 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -10v q gs q gd q g charge 0.33 x rated v ds to the oscilloscope -10 v d g s v ds v gs r g r d 0.33 x rated v ds to the oscilloscope d g s v ds v gs i d i g -1~-3ma

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